Analysis of Trapping Effects on the Forward Current–Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes
IEEE Transactions on Electron Devices(2018)
Abstract
The forward current-voltage characteristics (IF-VF) of aluminum (Al)-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation study that takes into account both intrinsic and doping-induced deep defects, namely, the Z1/2 and EH6/7 centers inside the drift region and an electrically active trap concentration inside the anode region due to the Al+ ion implantation process. F...
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Key words
P-i-n diodes,Anodes,Semiconductor process modeling,Analytical models,Doping,Resistance
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