Analysis of Trapping Effects on the Forward Current–Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes

M. Larbi Megherbi,Fortunato Pezzimenti,Lakhdar Dehimi,M. Achour Saadoune,Francesco G. Della Corte

IEEE Transactions on Electron Devices（2018）

Cited 36|Views9

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Abstract

The forward current-voltage characteristics (IF-VF) of aluminum (Al)-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation study that takes into account both intrinsic and doping-induced deep defects, namely, the Z1/2 and EH6/7 centers inside the drift region and an electrically active trap concentration inside the anode region due to the Al+ ion implantation process. F...

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Key words

P-i-n diodes,Anodes,Semiconductor process modeling,Analytical models,Doping,Resistance

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