Enhanced Reliability of In–Ga–ZnO Thin-Film Transistors Through Design of Dual Passivation Layers

Ablat Abliz,Da Wan,Jui-Yuan Chen,Lei Xu,Jiawei He,Yanbing Yang,Haiming Duan,Chuansheng Liu,Changzhong Jiang,Huipeng Chen,Tailiang Guo,Lei Liao

IEEE Transactions on Electron Devices（2018）

引用 38|浏览5

暂无评分

摘要

This paper investigates the effects of different passivation layers (PVLs) on the electrical performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film transistors (TFTs). By rational design, the fabricated a-InGaZnO TFT with hafnium oxide and aluminum oxide (HfO2/Al2O3) dual PVLs exhibits a field-effect mobility of 13.5 cm2/Vs, low sub threshold swing of 0.32 V/dec...

查看译文

关键词

Hafnium oxide,Thin film transistors,Stress,Logic gates,Reliability,Lighting

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要