A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

In this paper, we fabricated a W/Al2O3/Ti metal-insulator-metal (MIM) antifuse one-time programmable memory. A large current overshoot was observed during the dielectric breakdown, which generated a strong conductive filament and resulted in extremely low on-state resistance. The performance of this Al2O3-based antifuse has been demonstrated with an ultra large ON/OFF window on the order of 10(12). Both breakdown voltage and on-state resistance exhibit excellent uniformity, the off-state lifetime is projected to be 1591 years at 2 V, and the on-state exhibits a reliable filament that is difficult to rupture. (C) 2018 The Electrochemical Society.