New Insights on SOI Tunnel FETs with Low-Temperature Process Flow for CoolCube TM Integration

C. Diaz Llorente,C. Le Royer,P. Batude,C. Fenouillet-Beranger,S. Martinie, C.-M.V. Lu,F. Allain,J.-P. Colinge,S. Cristoloveanu,G. Ghibaudo,M. Vinet

Solid-State Electronics（2018）

Cited 9|Views58

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Abstract

•SOI Tunnel FETs were made using Low-Temperature process for 3D integration.•Dual ID-VDS verifies BTBT injection in TFETs and not Schottky Barrier tunnelling.•P-mode LT TFETs show ION similar to HT TFETs.

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Key words

Tunnel FET,TFET,SOI,Low temperature,SPER,Tunnelling,BTBT,3D integration

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