Enhancing silicon solar cells with singlet fission: the case for Forster resonant energy transfer using a quantum dot intermediate (vol 8, 022008, 2018)

JOURNAL OF PHOTONICS FOR ENERGY(2019)

引用 8|浏览7
暂无评分
摘要
One way for solar cell efficiencies to overcome the Shockley-Queisser limit is downconversion of high-energy photons using singlet fission (SF) in polyacenes like tetracene (Tc). SF enables generation of multiple excitons from the high-energy photons, which can be harvested in combination with Si. In this work, we investigate the use of lead sulfide quantum dots (PbS QDs) with a band gap close to Si as an interlayer that allows Forster resonant energy transfer (FRET) from Tc to Si, a process that would be spin-forbidden without the intermediate QD step. We investigate how the conventional FRET model, most commonly applied to the description of molecular interactions, can be modified to describe the geometry of QDs between Tc and Si and how the distance between QD and Si, and the QD bandgap affects the FRET efficiency. By extending the acceptor dipole in the FRET model to a 2-D plane, and to the bulk, we see a relaxation of the distance dependence of transfer. Our results indicate that FRET efficiencies from PbS QDs to Si well above 50% are possible at very short but possibly realistic distances of around 1 nm, even for QDs with relatively low photoluminescence quantum yield. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.
更多
查看译文
关键词
energy transfer,quantum dots,silicon,Forster resonant energy transfer,singlet fission,solar cells
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要