A Performance Comparison Between $\beta$ -Ga 2 O 3 and GaN HEMTs

Sandeep Kumar,Rohith Soman,Anamika Singh Pratiyush,Rangarajan Muralidharan,Digbijoy N. Nath

arXiv: Applied Physics（2019）

Cited 25|Views3

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Abstract

We report on the quantitative estimates of various metrics of performance for β-Ga2O3-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron velocity and current density are estimated based on an optical phonon model reported earlier. 2-D simulation using an appropriate velocity-field relationship...

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Key words

2-dimensional electron gas (2-DEG),β-Ga₂O₃,figure of merit,high electron mobility transistor (HEMT)

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