Ideality factor of 2 μm InGaSb/AlGaAsSb quantum well lasers

X. Li,H. Wang,Z. L. Qiao,X. Guo, Y. P. Liao,Y. Zhang,Y. Q. Xu,Z. C. Niu,C. Z. Tong,C. Y. Liu

ieee photonics conference（2017）

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摘要

The ideality factor of a 2 μm InGaSb/AlGaAsSb quantum well laser is investigated. The total ideality factor comes mainly from the central p-n junction and two metal-semiconductor junctions. It decreases from 4.0 to 3.3 when the temperature is increased from 20 to 80 o C.

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关键词

Quantum well lasers, Ideality factor

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