Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solver

A small-signal solver for junctionless nanowire field-effect transistors, capable of doing exact simulations in the full frequency range is presented for the first time. The solver uses a deterministic framework and shows great stability due to the transformation from kinetic energy to total energy and even/odd splitting of the distribution function. Small-signal terminal currents are calculated using the Ramo-Shockley theorem, and the simulation results are shown to satisfy the necessary conditions such as being reciprocal and passive in equilibrium.