New Process For Electrical Contacts On (100) N-Type Diamond

Obtaining ohmic contacts on n-type diamond is a very compelling concern in the framework of designing power electronic devices. The present contribution considers a new technological process combining microstructuring and highly phosphorus-doped overgrowth to investigate quasi-ohmic contacts on (100) phosphorus doped diamond. For now, the two processes were tested on (100) and (111) diamond single crystal substrates. The results are exposed and discussed.