Comments on “A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs”
IEEE Electron Device Letters（2017）
Abstract
Hong et al. [1] presented an analytical solution for the electrostatic potential in undoped cylindrical MOSFETs, which was then employed within a well-known Pao-Sah integral to yield the device current. This same analytical solution and drain current calculation were presented in 2016 [2], but such work was not referenced by Hong et al. [1].
MoreTranslated text
Key words
MOSFET,Semiconductor device modeling,Mathematical model,Electronic mail,Electrostatics,Electric potential,Flash memories
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined