Impact of Al content on InAs/AlSb/Al x Ga1−x Sb tunnelling diode
The Journal of Engineering（2017）
摘要
A method to engineer the peak-to-valley ratio (PVR) by design of the epitaxial layers is presented. The impact of Al content on PVR of InAs/AlSb/AlxGa1−xSb tunnelling diode is studied. A simplified analytical model is used to explain the PVRs dependence on Al content. It was found that PVR reaches its maximum when Al content x is zero with a quantised InAs layer. The peak positions appeared in the...
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关键词
tunnel diodes,semiconductor doping,indium compounds,aluminium compounds
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