Role Of Oxygen Vacancies For Resistive Switching In Noble Metal Sandwiched Pr0.67ca0.33mno3-Delta

Non-volatile resistance change under electric stimulation in oxides is a promising path to next generation memory devices. However, the underlying mechanisms are still not fully understood. We report here on the study of switching in Pr0.67Ca0.33MnO3-delta (PCMO) films sandwiched by noble metal Pt electrodes, where electrode oxidation can be excluded. In order to develop an understanding of the switching induced oxygen migration, its initial concentration is modified by post-annealing of the deposited PCMO films. The oxygen distribution is obtained by manganese valence determination using spatially resolved electron energy loss spectroscopy in scanning transmission electron microscopy mode. We observe correlations between virgin state resistance, resistive switching properties, oxygen vacancy distribution, and stress/strain state of the PCMO films and propose a simplified interface resistance model based on the measured valence distribution. It assumes a linear correlation of oxygen vacancy concentration with conductivity and a metal to insulator transition above a critical vacancy concentration threshold. Our results suggest that resistance changes can take place at both interfaces of symmetric devices and only requires small changes in oxygen vacancy concentration. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).