Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

M. Hong,H.W. Wan,P. Chang,T.D. Lin,Y.H. Chang,W.C. Lee,T.W. Pi,J. Kwo

Journal of Crystal Growth（2017）

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摘要

•Both MBE- and ALD high-k HfO2 in-situ on freshly MBE grown p- and n-InGaAs(001).•Both exhibited excellent C-Vs with true inversion and low leakage currents.•Interfacial trap densities (Dit’s) with no discernible peaks at the mid-gap.•Both exhibited outstanding thermal stabilities to 800°C.

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关键词

A3. Molecular-beam-epitaxy (MBE),Atomic-layer-deposition (ALD),B1. High-κ,HfO2,B2. InGaAs,B3. Metal oxide semiconductor capacitors (MOSCAPs),Interfacial trap density (Dit)

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