Radiation-Induced Alloy Rearrangement In Inxga1-Xn

The effect of radiation damage on the defect and alloy structure in InxGa1-xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>10(18) cm(-3)) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation. Published by AIP Publishing.