Valence transition in polycrystalline Eu(Rh1–xCox)2Si2 studied by hard x-ray photoemission spectroscopy

Katsuya Ichiki,Takayuki Matsumoto,Hiroaki Anzai, Ryohei Takeshita,Kodai Abe,Suzuna Ishihara,Takayuki Uozumi,Hitoshi Sato,Awabaikeli Rousuli,Shigenori Ueda,Yukihiro Taguchi,Kenya Shimada,Hirofumi Namatame,Masaki Taniguchi,Suguru Hamano,Akihiro Mitsuda,Hirofumi Wada,Kojiro Mimura

Journal of Electron Spectroscopy and Related Phenomena（2017）

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摘要

•Bulk-derived electronic structure of Eu(Rh1–xCox)2Si2 have been studied by HAXPES.•Temperature-dependent Eu mean valence evaluated from the Eu 3d HAXPES spectra was discussed.•The valence-band electronic structures with x=0 and 0.4 were revealed by HAXPES.•The temperature-induced valence transition of Eu(Rh1–xCox)2Si2 is derived from the increased c-f hybridization strength.

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关键词

Eu compounds,Valence transition,Electronic structure,Hard x-ray photoemission spectroscopy

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