Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures

K. Sawano, T. Nakama, K. Mizutani, N. Harada,X. Xu,T. Maruizumi

Journal of Crystal Growth（2017）

Cited 1|Views4

No score

Abstract

•Ge quantum dots were fabricated and effects of phosphorus δ-doping was examined.•P surface segregation was suppressed by the control of growth temperature.•Pl intensity is enhanced by the P doping due to the electron confinement.

Translated text

Key words

A1. Low dimensional structures,A3. Quantum wells,B2. Semiconducting germanium,B2. Semiconducting silicon compounds

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined