4.5 A 1.8erms⁻ temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter

CMOS image sensors (CIS) with global shutter (GS) function are required in a variety of areas, including broadcasting, automobile, drones, and surveillance applications. For these applications, GS CISs are needed to avoid rolling shutter (RS) distortion. These applications also benefit from the high image quality and high frame rates of GS CISs [1-3]. To realize a GS CIS, a memory structure and additional MOS transistors are necessary. Due to this increase in the number of components, photodiode area is restricted. Therefore, sensor performance (e.g., noise, sensitivity, and saturation) of GS CISs has generally remained inferior to that of RS sensors. To break down this constraint, we introduce a multiple-accumulation shutter technique for GS CISs. Furthermore, we combine the column single-slope ADCs with dual-gain amplifiers (SSDG-ADC) [4] to implement this technique effectively, while also achieving low power consumption and a high frame rate.