32-bit Processor core at 5-nm technology: Analysis of transistor and interconnect impact on VLSI system performance

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2016)

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摘要
A 32-bit commercial processor core is implemented at 5-nm design rules to study transistor and interconnect technology options and the impact of increasing interconnect resistance on system performance. Insights obtained are: 1) The major benefit of downscaling FET gate length is reducing MEOL parasitics instead of the intrinsic gate capacitance. 2) 2D-material-based FETs can achieve ∼2∗ better core-level energy-delay-product in theory compared to the projected Si FinFET; contact resistivity <6∗10 −8 Ω-μm 2 is required for 2D-FETs to match the core performance using Si FinFET. 3) Signal routing optimization can mitigate the impact of BEOL resistance such it contributes to 15%–35% of the total delay at the cost of using more cells and vias, which is not manifest if a ring oscillator with fixed wire load is used without performing full place-and-route. 4) Thinning Cu diffusion barrier can improve system performance up to 11% and alleviate BEOL variation impact.
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关键词
VLSI system performance,32-bit commercial processor core,interconnect resistance,FET gate length,core-level energy-delay-product,2D-FET,FinFET,signal routing optimization,BEOL resistance,ring oscillator,fixed wire load,diffusion barrier
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