A broadband and high power frequency tripler using 0.5 µm GaN-on-SiC HEMT technology

A frequency tripler for X-band signal generation was implemented in 0.5 µm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental- and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.