First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers
2016 IEEE Symposium on VLSI Technology(2016)
摘要
For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional 3D inverters with either PMOS or NMOS on the top level are highlighted. Furthermore, Si layer transfer above a 28nm W Metal 1 level of an industrial short loop and the return in a front end environment is presented, confirming the industrial compatibility of CoolCube™ integration.
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关键词
full 3D CMOS demonstration,CMOS 3D VLSI CoolCube integration,high performance fully-depleted silicon on insulator process,FDSOI,high-k-metal gate,functional 3D inverters,PMOS,NMOS,industrial short loop,front end environment,size 300 mm
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