Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950 degrees C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from similar to 30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I-th), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (eta(i)), from 63% to 68%, and increased internal losses alpha(i), from 14.3 to 18.6 cm(-1). Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.