Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis

In this paper, we present extensive characterization of low-frequency noise in advanced silicon germanium heterojunction bipolar transistors. We demonstrate the extraction methodology of base and collector noise spectral densities for a wide range of transistor geometries. In addition to 1/f noise, generation-recombination (G-R) mechanisms are observed at low bias in the base current noise. Their ...