Investigation Of 1.3 Mu M Algainas Multiquantum Wells For Electro-Absorption Modulated Laser

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE(2016)

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摘要
Monolithic photonic integrated circuits ( PIC) transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 mu m band. These devices could also be crucial for short reach connections and access networks. With this aim, we are studying basic quantum well designs for a laser and an electro-absorption modulator switch to be integrated by selective area growth into PICs at 1.3 mu m. Photocurrent measurements and band offset modeling have been performed to determine the MQW stack well-fitted for this application. Broad area laser measurements have also been checked on these structures to verify the material lasing properties. A 6 nm thick well with low barrier seems to be the best trade-off between absorption and shift for 1.3 mu m EAM and it also gives good lasing properties. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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关键词
III-V semiconductors, AlGaInAs, electro-absorption modulators, multi-quantum wells, quantum confined Stark effect
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