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MBE生长InGaAs/In0.32≤x≤0.52Al1-xAs MM-HEMT材料

邱凯,张晓娟,陈建炉

Micronanoelectronic Technology（2003）

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Abstract
在GaAs衬底上利用分子束外延技术生长了不同In组分的Metamorphic HEMT(简称MM-HEMT).通过对MM-HEMT材料中台阶式缓冲层材料种类、台阶宽度、初始组分以及生长温度等生长参数、生长条件和结构参数进行优化,得到了具有良好电学性能的MM-HEMT材料,其二维电子气迁移率和浓度指标与国外同期水平相当.
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