Hydrogenated nanomorphous silicon(na-Si∶H) p-i-n solar cells

This work reports the preparation of pin solar cells, using wide gap nanomorphous silicon (na-Si:H) as intrinsic layer, which was fabricated by VHF-PECVD under proper hydrogen dilution(RH=15) and substrate temperature(Ts=170℃). High initial open circuit voltage (Voc) of 0.94V with fill factor (FF) of 0.72 and conversion efficiency (Eff) of 8.35% (AM1.5, 100mW/cm~2) have been achieved for glass/ITO/p-a-SiC:H/i-na-Si:H/n-nc-Si:H/Al superstrate pin nanomorphous silicon (na-Si:H) solar cells by the addition of graded-band-gap layers at p/i and i/n interfaces and optimized structure design.