High Performance and Stable Flexible Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers on Poly(Ethylene Naphthalate) Substrate

A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the fabrication process temperature was suppressed below 180 °C. To improve the surface roughness and water vapor transmission rate of the PEN substrate, the organic/inorganic hybrid barrier layer was introduced. The gate-stack was composed of all oxide lay...