Source-Field-Plated $eta$ -Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2

Yuanjie Lv,Xingye Zhou,Shibing Long,Xubo Song,Yuangang Wang,Shixiong Liang,Zezhao He,Tingting Han,Xin Tan,Zhihong Feng,Hang Dong,Xuanze Zhou,Yangtong Yu,Shujun Cai,Ming Liu

IEEE Electron Device Letters（2019）

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摘要

In this letter, source-field-plated β-Ga2O3 MOSFETs are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating β-Ga2O3 substrate. Ohmic contact resistance (Rc) between metal- and ion-implanted source/drain layer of 1.0 Ω · mm is obtained by employing the Si-ion implantation. The fabricated source-field-plated β-Ga2O3 MOSFETs with source-to-drain distance (Lsd) of 11 and 18 μm ...

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关键词

MOSFET,Logic gates,Temperature measurement,Electric breakdown,Silicon,Transmission line measurements,Performance evaluation

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Source-Field-Plated $eta$ -Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2

Source-Field-Plated $eta$ -Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2