Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Yanli Zhao,Junjie Tu,Jingjing Xiang,Ke Wen,Jing Xu,Yang Tian,Qiang Li,Yuchong Tian,Runqi Wang,Wenyang Li, Mingwei Guo, Zhifeng Liu,Qi Tang

Frontiers of Optoelectronics（2019）

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摘要

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

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关键词

optical communication, separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM APD), dead space effect, temperature coefficient

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