Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

C.-M. Zhang,F. Jazaeri, G. Borghello,S. Mattiazzo,A. Baschirotto,C. Enz

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)（2018）

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摘要

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

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关键词

MOSFET,Degradation,Total ionizing dose,Logic gates,Threshold voltage,CMOS process

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