Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon

Elastically strained metastable Ge 1– x Sn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%.