Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

— We present the results of photoluminescence measurements of Al x Ga 1 – x As nanowires, together with the transmission electron microscopy structural analysis. Al x Ga 1 – x As nanowires were grown by molecular beam epitaxy under the nominal aluminum contents х = 0.3–0.7. The obtained results demonstrate the presence of wurtzite structure in Al x Ga 1 – x As nanowires.