Microstructure and Raman Scattering of Cu 2 ZnSnSe 4 Thin Films Deposited onto Flexible Metal Substrates

Semiconductors(2018)

Cited 8|Views33
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Abstract
Cu 2 ZnSnSe 4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu 2 ZnSnSe 4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.
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Key words
cu2znsnse4 thin films,flexible metal substrates,raman scattering,thin films
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