In As 1– x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Unrelaxed InAs 1– x Sb x ( x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs 1– x Sb x alloys is established.