Bipolar resistance switching properties of pulse laser deposited a-ZrO 2 /a-IGZO transparent heterojunction

Transparent resistive switching characteristics of amorphous ZrO 2 (a-ZrO 2 ) based memory film with amorphous In and Ga co-doped ZnO (a-IGZO) conducting electrode were investigated. a-ZrO 2 /a-IGZO heterojunction was fabricating using pulse laser deposition techniques on quartz substrate. Structural, surface, electrical, and optical properties of a-ZrO 2 /a-IGZO heterojunction were investigated at room temperature. Smooth surface morphology and amorphous nature of the structure has been confirmed from the atomic force microscopy (AFM) and grazing incident X-ray diffraction (GIXRD) analysis. a-ZrO 2 /a-IGZO heterojunction has optical transmission exceeding 80% in visible light of electromagnetic spectrum. I–V characteristics show a forming free, bipolar resistance switching type behavior. Migration of oxygen ions from IGZO layer through ZrO 2 layer creating the oxygen vacancy filament play an important role in the forming free resistive switching.