Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

A. Khachatrian,N. J-H Roche,S. Buchner,A. D. Koehler,T. J. Anderson,K. D. Hobart,D. McMorrow,S. D. LaLumondiere,N. P. Wells, M. A. Tockstein, E. C. Dillingham, J. P. Bonsall, P. Karuza,W. T. Lotshaw,S. C. Moss, D. L. Brewe,V. Ferlet-Cavrois, M. Mushitiello

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2017）

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摘要

The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.

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关键词

single event transients,algan/gan,schottky-gate

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