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Sparse-Insertion Write Cache to Mitigate Write Disturbance Errors in Phase Change Memory.

IEEE Transactions on Computers(2019)

Cited 6|Views35
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Abstract
As the number of datasets processed in computing systems has increased in recent years, there is growing demand for high capacity main memory subsystems. However, further increases in the capacity of conventional DRAM-based main memory systems have stalled due to scaling limitations. Recent studies have shown that PCM, which can provide greater capacity than DRAM, is emerging as a candidate for hi...
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Key words
Phase change materials,Resistance,Random access memory,Heating systems,Programming,Writing,Phase change memory
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