Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)（2018）
Abstract
In radio frequency (RF) integrated circuits for LTE transmitters (Tx), the consideration of the thermal and nonlinear coupling between the Power Amplifier (PA) and adjacent RF filters realized by Bulk Acoustic Wave (BAW) technology is crucial for reliability and requires special attention. A co-design of Gallium Arsenide (GaAs) PA, BAW Tx filter with optimum matching network is created on two substrate technologies. One design utilizes a novel silicon-ceramic (SiCer) platform which combines a stack of low temperature co-fired ceramic (LTCC) layers with a thin silicon wafer in a single composite substrate and the second design uses standard woven glass/epoxy substrate technology. The linear performance of the different substrate technologies are compared with the same layout design. The BAW filter is based on Solidly Mounted Resonators (SMR) electrically coupled in a ladder type topology.
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Key words
Power Amplifier integration,silicon-ceramic composite,standard epoxy/glass substrate,radio frequency integrated circuits,RF,LTE transmitters,thermal coupling,nonlinear coupling,Bulk Acoustic Wave technology,BAW Tx filter,optimum matching network,low temperature co-fired ceramic layers,silicon wafer,single composite substrate,standard woven glass/epoxy substrate technology,linear performance,layout design,Solidly Mounted Resonators electrically coupled,PA,substrate technologies,ladder type topology,GaAs
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