Extraction of Voltage-Dependent Capacitances of SiC Device through Inductive Coupling Method

Zhenyu Zhao,Kye-Yak See,Eng-Kee Chua,Arun Shankar Narayanan,Arjuna Weerasinghe,Wayne Chen

2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (EMC/APEMC)（2018）

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摘要

The terminal capacitances of Silicon Carbide (SiC) semiconductor device affect its dynamic characteristics during switching and influence the EMC performance of the power conversion circuit. This paper describes an inductive coupling method to extract these capacitances with the device-under-test (DUT) operating at varying DC voltage. The capacitance extraction can be performed without direct electrical contact to the DUT.

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关键词

Junction capacitances measurement,Silicon Carbide (SiC),two-current -probe,two-port ABCD network

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