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A 3-Micron-Radius Bend for SOI TE0/TE1 Multiplexing

2018 Conference on Lasers and Electro-Optics (CLEO)(2018)

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Abstract
We propose a 3-micron-radius, TE 0 /TE 1 multiplexed 90-degree bend that numerically exhibits 0.8 dB bending loss and 20 dB crosstalk suppression over 30nm bandwidth on an silicon-on-insulator platform. An S-bend shows >37 dB colorless crosstalk suppression.
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Key words
bending loss,colorless crosstalk suppression,three-micron-radius bend,SOI TE0/TE1 Multiplexing,silicon-on-insulator platform,noise figure 20.0 dB,noise figure 0.8 dB
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