Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

Jun Zheng, Zhi Liu,Yongwang Zhang,Yuhua Zuo,Chuanbo Li,Chunlai Xue,Buwen Cheng,Qiming Wang

Journal of Crystal Growth（2018）

引用 48|浏览33

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摘要

•GeSn crystalline films with Sn content up to 0.28 were reported.•The high Sn content GeSn alloys were grown by sputtering epitaxy.•The Ge0.72Sn0.28 alloys are stable below 400 °C.

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关键词

A1. Crystal structure,A1. Segregation,A3. Physical vapor deposition processes,B1. Alloys,B2. Semiconducting germanium

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