Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices

The resistive switching characteristics of MnO and CeO2 layers with a large resistance ratio (>105) were demonstrated. The Ag/MnO/CeO2/Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO2 layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO2 and CeO2−x. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.