Wafer-Scale Substitutional Doping of Monolayer MoS 2 Films for High-Performance Optoelectronic Devices.

The substitutional doping method is ideally suited to generating doped 2D materials for practical device applications as it does not damage or destabilize such materials. However, recently reported substitutional doping techniques for 2D materials have given rise to discontinuities and low uniformity which hamper the extension of such techniques to large-scale production. In the current work, we demonstrated uniform substitutional doping of monolayer MoS2 in the area of a two-inch wafer (>13 cm2). The devices based on doped MoS2 showed extremely high uniformity and stability in electrical properties in ambient condition for 30 days. The photodetectors based on the doped MoS2 samples showed ultrahigh photoresponsivity of 5 x 105 A/W, detectivity of 5 x 1012 Jones and fast response rate of 5 ms than did that based on undoped MoS2. This work showed the feasibility of real-life applications based on functionalized 2D semiconductors for next-generation electronics and optoelectronics.