Controlling The Ambipolarity And Improvement Of Rf Performance Using Gaussian Drain Doped Tfet

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 x 10(-19) cm(-3)) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f (T)), gain bandwidth product (GBW), and gate-to-drain capacitance (C (gd)) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.