3D heterogeneous integration technology using hot via MMIC and silicon interposer with millimeter wave application

The block diagram of 3D heterogeneous integration using hot-via LNA, silicon interposer, PCB is presented in this paper. Several broadband vertical transitions between up and down are simulated and optimized by EM simulator. The vertical transition works well from DC to 40GHz, the return loss is better than 15 dB; the insertion loss of each single transition is less than 1 dB. The LNA operating at Ka band using hot via technology is also presented and assembled onto the silicon substrate and multilayer PCB. This stacked LNA module shows the good performance and reasonable agreement with on wafer measurement of normal LNA.