Performance boost of crystalline In-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application

Shao Hui Wu,X. Y. Jia,Xiang Li,Chi Chang Shuai,Hung Chan Lin, Ming Chang Lu, Tzung Han Wu, Mu Yi Liu,J. Y. Wu,Daisuke Matsubayashi,Kiyoshi Kato,Shunpei Yamazaki

Symposium on VLSI Technology-Digest of Technical Papers（2017）

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Abstract

The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (I-off) at similar to 10(-21)A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff) CPU is successfully demonstrated with drastically reduced power consumption (similar to 94% power reduction for ARM Cortex-M0 and similar to 70% power reduction for memory), making it a promising candidate for IoT application. In addition, an OS-FPGA is successfully fabricated by integration of 65nm SiFET and 60nm oxide semiconductor FET (OSFET) with an operation frequency of 360MHz. The application of the OSFET in analog circuits will also be discussed in this paper.

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Key words

analog circuits,OSFET,oxide semiconductor FET,power reduction,ARM Cortex-M0,power consumption,low off-state leakage,carrier mobility,IGZO material,DOSRAM,dynamic oxide semiconductor RAM,normally-off CPU application,IoT,performance boost,frequency 100 MHz,size 60 nm,frequency 360 MHz,In-Ga-Zn-O

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