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4Gb perpendicular STT-MRAM with compact cell structure and beyond

Tatsuya Kishi,Masatoshi Yoshikawa,Toshihiko Nagase,Hisanori Aikawa,Sung-Woong Chung,Joo-Seog Park,H. Kanaya,Ki-Seon Park,Guk Cheon Kim, Myung Shik Lee,Kazumasa Sunouchi,A. Yamamoto, K.-M. Rho,Kenji Tsuchida,Hyeongon Kim, Y.S. Chun,Sung-Kee Hong,Hisato Oyamatsu

ieee international magnetics conference（2017）

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Abstract
Since the discovery of a theoretical idea of spin-transfer torque (STT) [1], STT-MRAM has attracted a great interest as a candidate of universal memory.
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Key words
universal memory,MTJ,spin-transfer torque,compact cell structure,perpendicular STT-MRAM,storage capacity 4 Gbit
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