High performance photoresponsive field-effect transistors based on MoS2/pentacene heterojunction

Monolayer molybdenum disulfide (MoS2), with a high predicted intrinsic mobility of ∼410 cm2/V at room temperature, shows great potential for application in sensors and optoelectronics as a result of good electrical performance and photoemission. Compared with the photoresponsive photodiodes, photoresponsive field-effect transistors exhibit higher sensitivity and lower noise. And, pentacene is a small molecule organic semiconductor and has high absorption in the visible region. Here, we reported on a high-performance photoresponsive field-effect transistor based on MoS2/pentacene inorganic/organic planar heterojunction. The results showed that the device demonstrated superior performance. Under 655 nm light illumination, the device exhibited an ultrahigh photoresponsivity of 103 A/W, a maximum photosensitivity of 1.8 × 103 and a high external quantum efficiency of around 195%, respectively.