Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer

By increasing the Mg-doping level and hence the hole concentration in the p-AlGaN electron-blocking layer (EBL), particularly around the interface between the EBL and the top quantum barrier (QB), of a light-emitting diode (LED), the polarization field in this layer can be screened for reducing the potential barrier of hole and hence enhancing the hole-tunneling efficiency such that the overall LE...