Broadband Terahertz-Light Emission By Current-Injection Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

Deepika Yadav,Youssef Tobah,Junki Mitsushio,Gen Tamamushi,Takayuki Watanabe,Alexander A. Dubinov,Maxim Ryzhii,Victor Ryzhii,Taiichi Otsuji

Conference on Lasers and Electro-Optics（2017）

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摘要

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the currentinjection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

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关键词

broadband terahertz-light emission,graphene-channel field-effect transistor,amplified spontaneous broadband terahertz emission,current injection,distributed-feedback dual-gate graphene-channel transistor,nonlinear threshold-like behavior,precise DFB cavity design,spontaneous broadband emission,single-mode THz lasing,temperature 100.0 K,frequency 1.0 THz to 7.6 THz,C

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