Study on geometry of silicon PIN radiation detector for breakdown voltage improvement

The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Omega cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 mu m to 260 mu m. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 mu m to 500 mu m.